Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method

ABSTRACT

A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a division of application Ser. No. 10/144,025, filedMay 14, 2002, now U.S. Pat. No. 6,742,944 which is based upon and claimsthe benefit of priority from the prior Japanese Patent Application No.2001-143682, filed May 14, 2001, all of which are incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a manufacturing method of an alkalinesolution for developing and removing a resist film, and the like and thealkaline solution, a pattern forming method using the alkaline solution,a removing method of a resist film, a solution application apparatus, asubstrate treatment method prior to forming the resist film, and asolution supplying method of scanning a linear solution supply nozzlefrom one end to the other end of a substrate, and supplying the solutiononto the substrate from the solution supply nozzle to form a solutionfilm on the substrate.

2. Description of the Related Art

With the miniaturization of semiconductor elements and enlargement of adiameter of a substrate, in a conventional developing method, generationof a critical defect resulting from development, variation of a patternsize in a substrate surface and chip, and the like raise large problems.

In general, in a semiconductor manufacturing process, aqueous solutionssuch as alkaline tetramethyl ammonium hydroxide (TMAH) are used as adeveloping solution for a photosensitive resist film. Since thedeveloping solution is an aqueous solution, wettability is notsufficient with respect to a photosensitive resist surface having ahydrophobic property. Therefore, when a reaction product resulting fromneutralization is in the vicinity of the resist film surface, thedeveloping solution is not easily diffused between the reaction productand the photosensitive resist surface. As a result, the reaction productcannot sufficiently be removed by pure water in a rinse process, andremains on the substrate and disadvantageously produces a defect.

Moreover, in a pattern disposed in a broad dissolution region, theamount of reaction products present in the vicinity of the pattern islarge. Therefore, the developing solution is not easily diffused betweenthe reaction product and the photosensitive resist film, and a progressof development is hindered. Therefore, for the pattern disposed in thebroad dissolution region, as compared with a pattern disposed in aregion whose periphery is hardly dissolved, there is a problem that aline size is increased.

It has previously been possible to solve these problems to some degreeby using a developing solution with a surface-active agent added theretoto enhance affinity of the photosensitive resist surface for thedeveloping solution. However, with the reduction in exposure wavelength,it has been necessary to maintain transparency/etching resistance of aresin in a short wavelength band, and a photosensitive resist materialhaving a strong interaction between resins has been used. Therefore,when the developing solution with the surface-active agent added theretois used, the wettability with the photosensitive resist film surface canbe enhanced only to a certain degree. As a result, problems occur thatdefects are generated and a size difference is brought in a sparse/densepattern.

Additionally, with the size miniaturization of the semiconductor elementand the enlargement of the diameter of the substrate, in theconventional method, a size variation of the pattern in the substratesurface and chip, which is said to result from the development, raises alarge problem. As a countermeasure, a technique of scanning a linearnozzle from one end to the other end of the substrate and forming asolution film evenly on the whole surface of the substrate has beenproposed (Jpn. Pat. Appln. KOKAI Publication Nos. 10-303103 and10-189419).

In the technique described in the Jpn. Pat. Appln. KOKAI PublicationNos. 10-303103 and 10-189419, it is disclosed that a gap between asupply position of the nozzle and the substrate is 0.3±0.1 mm, a flowrate of the developing solution is set to 1.5 L/min., a scanning speedof the nozzle is set to 10 to 500 mm/second and the solution film isformed. However, even when the solution film is formed in theseconditions, the formed solution film thickness is not necessarily equalto the gap. Therefore, a size difference is disadvantageously producedin a substrate plane and chip depending on a subtle flow of the solutiongenerated during the application of the solution. Concretely, since theformed solution film thickness is not equal to the gap, a subtlesolution flow is generated during the application of the solution. Whena dissolution region exists upstream of a solution flow, the etchingspeed drops due to an influence of reaction products. Conversely, whenthe upstream of solution flow is a non-dissolution region, the etchingspeed rises due to the fresh developing solution.

As described above, the photosensitive resist having a stronginteraction between resins has been used, the defects are generated, anda size difference is disadvantageously produced in the sparse/densepattern.

Moreover, in the technique of scanning a linear nozzle from one end tothe other end of a substrate and forming a solution film evenly on thewhole surface of the substrate, the size dispersion is disadvantageouslyproduced in a substrate plane and chip due to the subtle solution flowgenerated during the application of the solution.

BRIEF SUMMARY OF THE INVENTION

(1) According to one aspect of the present invention, there is provideda manufacturing method of an alkaline solution, comprising: dissolving agaseous molecules in an aqueous alkaline solution and having oxidizingproperties or reducing properties.

(2) According to one aspect of the present invention, there is provideda manufacturing method of an alkaline solution, comprising: mixing asolution in which a gaseous molecules having oxidizing properties orreducing properties is dissolved in a pure water with an aqueousalkaline solution to manufacture the alkaline solution.

(3) According to one aspect of the present invention, there is provideda pattern forming method comprising: a step of coating a substrate witha photosensitive resist film; a step of exposing the photosensitiveresist film; a step of supplying a developing solution in which agaseous molecules having oxidizing properties or reducing properties isdissolved to the photosensitive resist film, and developing the resistfilm; and a step of supplying a cleaning solution to the surface of thesubstrate, and cleaning the substrate.

(4) According to one aspect of the present invention, there is provideda removing method of a resist film, comprising a step of supplying analkaline remover with a gaseous molecules having oxidizing properties orreducing properties dissolved therein to a substrate in which a patternof a photosensitive resist film is formed on a base material and theresist film is used as a mask to subject the base material to an etchingtreatment, and removing the resist film; and a step of supplying acleaning solution onto the substrate, and cleaning the substrate.

(5) According to one aspect of the present invention, there is provideda solution application apparatus comprising: a substrate holding basewhich holds a substrate; a gas dissolution mechanism including eitherone of a mechanism in which an oxidizing gas is dissolved in an alkalinesolution and a mechanism in which a reducing gas is dissolved in thealkaline solution; an alkaline solution supply nozzle which supplies thealkaline solution in which a gaseous molecule having oxidizingproperties or reducing properties is dissolved by the gas dissolutionmechanism onto a main surface of the substrate: and a cleaning supplynozzle which supplies a cleaning solution to the substrate main surface.

(6) According to one aspect of the present invention, there is provideda substrate treatment method comprising: coating a substrate with aphotosensitive resist film; exposing the photosensitive resist film;supplying a reducing solution to the surface of the exposedphotosensitive resist film and performing a pretreatment; developing thepretreated resist film; and supplying a cleaning solution onto thesubstrate, and cleaning the substrate.

(7) According to one aspect of the present invention, there is provideda substrate treatment method comprising: coating a substrate with aphotosensitive resist film; exposing the photosensitive resist film;supplying a developing solution to the photosensitive resist film, andforming a developing solution film; supplying a functional solutionhaving oxidizing properties or reducing properties onto the substratewith the developing solution film formed thereon, and subsequentlyfluidizing the functional solution and the developing solution film; anda process of supplying a cleaning solution to the surface of thesubstrate, and cleaning the substrate.

(8) According to one aspect of the present invention, there is provideda solution supplying method of scanning a linear solution supply nozzlefrom one end to the other end of a substrate, and supplying a solutiononto the substrate via the solution supply nozzle to form a solutionfilm on the substrate, the method comprising: controlling at least oneof a supply amount of a solution nozzle and a scanning speed of thesolution supply nozzle so that a film thickness d of the solution filmformed on the substrate is substantially equal to a gap H between asupply position of the solution supply nozzle and the substrate.

(9) According to one aspect of the present invention, there is provideda solution supplying method of scanning a linear solution supply nozzlefrom one end to the other end of a substrate, and supplying a solutiononto the substrate via the solution supply nozzle to form a solutionfilm on the substrate, the method comprising: setting a gap H (mm)between a supply position of the solution supply nozzle and thesubstrate to a value obtained by dividing a solution supply speed Q(μl/sec) from the solution supply nozzle by a product of a scanningspeed V (mm/sec) of the solution supply nozzle and a length L (mm) of adischarge port of the solution supply nozzle.

(10) According to one aspect of the present invention, there is provideda solution supplying method of scanning a linear solution supply nozzlefrom one end to the other end of a substrate, and supplying a solutiononto the substrate via the solution supply nozzle to form a solutionfilm on the substrate, the method comprising: setting a solution supplyspeed Q (μl/sec) to a product of a gap H (mm) between a supply positionof the solution supply nozzle and the substrate, a scanning speed V(mm/sec) of the solution supply nozzle, and a length L (mm) of adischarge port of the solution supply nozzle.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a diagram showing a schematic constitution of a developingunit according to a first embodiment.

FIGS. 2A to 2F are process diagrams showing a developing processaccording to the first embodiment.

FIGS. 3A, 3B are explanatory views of an effect of use of a developingsolution having oxidizing properties according to the first embodiment.

FIGS. 4A to 4F are process diagrams showing the developing processaccording to a second embodiment.

FIGS. 5A, 5B are explanatory views of an effect of use of the developingsolution having reducing properties according to the second embodiment.

FIG. 6 is a diagram showing a schematic constitution of a resistremoving apparatus according to a third embodiment.

FIG. 7 is a diagram showing a schematic constitution of the developingunit according to a fourth embodiment.

FIGS. 8A to 8G are process diagrams showing a developing methodaccording to the fourth embodiment.

FIG. 9 is a diagram showing a schematic constitution of the developingunit according to a fifth embodiment.

FIG. 10 is a diagram showing a schematic constitution of a solutionsupply system of the developing unit shown in FIG. 9.

FIG. 11 is a flowchart showing the developing method according to afifth embodiment.

FIGS. 12A to 12I are process diagrams showing the developing processaccording to the fifth embodiment.

FIG. 13 is a flowchart showing the developing method according to asixth embodiment.

FIGS. 14A to 14I are process diagrams showing the developing processaccording to the sixth embodiment.

FIG. 15 is a flowchart showing a treatment procedure of the developingmethod according to a seventh embodiment.

FIGS. 16A to 16E are process diagrams showing the developing methodaccording to the seventh embodiment.

FIGS. 17A to 17C are explanatory views of a method of controlling adeveloping solution film thickness formed on a substrate according tothe seventh embodiment.

FIG. 18 is a characteristic diagram showing a size uniformity of anisolated line in a chip of a time at which a gap between a developingsolution supply nozzle and a substrate is changed.

FIGS. 19A, 19B are diagrams showing the state of a developing solutionsupplied via the developing solution supply nozzle when the developingsolution supply nozzle passes to a substrate middle from a supply startend.

FIGS. 20A, 20B are diagrams showing the state of the developing solutionsupplied via the developing solution supply nozzle when the developingsolution supply nozzle passes to the developing solution supply startend from a substrate middle.

FIG. 21 is a characteristic diagram showing a developing solution supplyspeed Q (μl/sec) with respect to a position of the developing solutionsupply nozzle according to an eighth embodiment.

FIG. 22 is a characteristic diagram showing a nozzle scanning speed V(mm/sec) with respect to the position of the developing solution supplynozzle according to the eighth embodiment.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention will be described hereinafter withreference to the drawings.

(First Embodiment)

FIG. 1 is a diagram showing a schematic constitution of a developingunit according to a first embodiment of the present invention.

In the present unit, as shown in FIG. 1, a fixed base 101 onto which asubstrate 100 is fixed is connected to a rotation mechanism 102 forrotating the fixed base 101 and substrate 100. A protective cup 103 withwhich the periphery of the substrate 100 is covered is disposed in orderto prevent a developing solution, cleaning solution, and the like on thesubstrate 100 from being scattered during rotation of the substrate 100by the rotation of the rotation mechanism 102.

A developing solution supply nozzle 111 scanned on the substrate 100 isdisposed. A developing tank 113 is connected to the developing solutionsupply nozzle 111 via a pipe 112. The deaerated developing solution isstored in the developing tank 113. The developing solution stored in thedeveloping tank 113 is an aqueous solution such as alkaline tetramethylammonium hydroxide (TMAH). The developing solution has an alkaliconcentration which is not less than 1% and less than 4%.

In the pipe 112, an oxidizing gas dissolution mechanism 114 fordissolving oxidizing gases such as oxygen and ozone in the deaerateddeveloping solution, and a reducing gas dissolution mechanism 115 fordissolving reducing gases such as hydrogen in the deaerated developingsolution are inserted.

In the oxidizing gas dissolution mechanism 114, the deaerated developingsolution is passed through an oxidizing gas dissolved film 114 b intowhich a gas generated in an oxidizing gas generator 114 a is introduced,and a gaseous molecules are dissolved in the developing solution. In thereducing gas dissolution mechanism 115, the deaerated developingsolution is passed through a reducing gas dissolved film 115 b intowhich a gas generated in a reducing gas generator 115 a is introduced,and the gaseous molecules are dissolved in the developing solution.Additionally, the developing solution with the oxidizing gas dissolvedtherein will be hereinafter referred to as an oxidizing developingsolution, and the developing solution with the reducing gas dissolvedtherein will be hereinafter referred to as a reducing developingsolution. For example, a hollow fiber film of Teflon (trademark) is usedin the oxidizing gas dissolved film 114 b and reducing gas dissolvedfilm 115 b.

Additionally, the oxidizing gas dissolution mechanism 114 or thereducing gas dissolution mechanism 115 may be constituted to pass purewater through the dissolved film and dissolved the gaseous molecules,and subsequently to mix the developing solution having a concentrationincreased beforehand and generate the developing solution, as long asthe oxidizing or reducing developing solution can be generated.

The developing solution supply nozzle 111 is scanned on the substrate100 in one direction from the outside of the periphery of the substrate100 by a scanning mechanism (not shown), and moves relatively withrespect to the substrate 100. A length of the developing solution supplynozzle 111 in a direction vertical to the scanning direction is greaterthan the diameter of the substrate 100. The developing solution supplynozzle 111 is scanned on the substrate 100, the developing solution isdischarged onto the substrate 100, and the whole surface of thesubstrate 100 is coated with the developing solution.

Moreover, a current plate 104 constituted of a flat rotary disc having asuction hole in a middle thereof, and an elevator mechanism of thecurrent plate 104 are disposed above the substrate 100. When the currentplate 104 rotates on the substrate 100, the developing solution appliedonto substrate 100 is agitated.

Additionally, the developing solution supply nozzle 111 is not limitedto the above-described embodiment, as long as the developing solutioncan be uniformly supplied onto the substrate. Moreover, the agitatingmechanism is not limited to the above-described embodiment, as long asthe mechanism has the action of agitating the developing solution duringthe developing.

A cleaning solution supply nozzle 121 for discharging a cleaningsolution such as pure water supplied from a pure water transport line122 onto the surface of the substrate 100 is disposed above the fixedbase 101.

The developing unit shown in FIG. 1 has both the oxidizing gasdissolution mechanism 114 and the reducing gas dissolution mechanism115, but only one of the mechanisms may be disposed, as circumstancesdemand. Moreover, when the oxidizing gas or the reducing gas isinline-supplied, the gas generators 114 a, 115 a are unnecessary.

A developing method of supplying the oxidizing developing solution asthe developing solution to the surface of the substrate by thedeveloping unit shown in FIG. 1 will next be described with reference toFIGS. 2A to 2F. FIGS. 2A to 2F are process diagrams showing a developingprocess according to the first embodiment. This developing process isused in a manufacturing process of a semiconductor device or a liquidcrystal display.

First, the substrate 100 is coated with an anti-reflection coating, andchemically amplified resist, and a desired pattern is reduced projectionexposure via a reticle for exposure by a KrF excimer laser. After thesubstrate 100 is heat-treated (PEB), the substrate 100 is conveyed tothe developing unit, and held on the fixed base 101 (FIG. 2A).

Subsequently, the developing solution supply nozzle 111 is scanned fromone end to the other end of the substrate 100, and the oxidizingdeveloping solution is discharged in a curtain form so that a developingsolution film 201 is formed on the substrate 100 (FIG. 2B). Aconventional developing solution is generated by adding a surfactant tothe TMAH. In the present embodiment, the oxidizing developing solutionformed by passing the developing solution through the oxidizing gasdissolved film 114 b with the oxygen gas generated in the oxidizing gasgenerator 114 a introduced therein is used.

Subsequently, after moving downwards the current plate 104 to be aboveon the substrate 100, the current plate 104 is rotated at 3000 rpm andan air current is formed above the substrate 100. The developingsolution film 201 is agitated by the formed air current (FIG. 2C). Whenthe developing solution film 201 is agitated, concentration unevennessof the developing solution due to the reaction products in thedeveloping solution film 201 is eliminated.

After an elapse of developing time in which a desired resist pattern isobtained, the substrate 100 is rotated, dissolved hydrogen water(reducing solution) 202 is discharged onto the substrate 100 via thecleaning solution supply nozzle 121 and the developing is stopped, andthe developing solution, reaction product, and the like on the substrate100 are rinsed for ten seconds (FIG. 2D). The dissolved hydrogen wateris pure water with hydrogen dissolved therein.

When the dissolved hydrogen water is supplied as the cleaning solutionto the substrate 100, an organic particle as the reaction product isreduced, and affinity between the organic particle and the resistsurface is alleviated. When the affinity is alleviated, the organicparticles are inhibited from adhering to the resist surface, and defectsare inhibited from being generated.

After the cleaning, the substrate 100 is rotated at a high speed, thedissolved hydrogen water 202 on the substrate 100 is thrown off bycentrifugal force, and the substrate 100 surface is dried (FIG. 2E).

The developing process of the resist film is ended by theabove-described treatment, and the substrate 100 is collected (FIG. 2F).

Additionally, the forming method of the developing solution film 201 isnot limited to the method of scanning the developing solution supplynozzle 111 to the other end from one end of the substrate and formingthe solution film. Examples of other methods include a method ofrelatively rotating the developing solution supply nozzle 111 andsubstrate 100 and discharging the developing solution to form thedeveloping solution film, a method of spraying the developing solutionuniformly onto the whole surface of the substrate via a spray nozzle toform the developing solution film, and the like. The method is notlimited as long as the developing solution film can be formed uniformlyon the substrate. Moreover, the agitating method of the formeddeveloping solution film includes: rotating the current plate 104 on thesubstrate 100 to generate an air current. However, examples of themethod include: a method of rotating the substrate 100, a method ofvibrating the solution by a vibrator from the outside, and the like. Anymethod may be used as long as the method has an action of fluidizing thedeveloping solution on the whole substrate surface.

As the oxidizing developing solution, a solution obtained by dissolvingoxygen gaseous molecules in the developing solution is used. However,when a similar effect is produced, not only oxygen but also oxidizinggases such as ozone, carbon monoxide, and hydrogen peroxide may be usedas the gaseous molecules to be dissolved. Moreover, pure water with thegaseous molecules dissolved therein may be mixed with a concentrateddeveloping solution the functional developing solution. Additionally, todissolve the gaseous molecules into pure water, deaerated pure water ispassed through the dissolved film with the gaseous molecules introducedtherein.

If the oxidizing developing solution has too high an oxidizing ability,it will oxidize and decompose not only the reaction product (laterdescribed), but also the resist. Consequently, the solution will damagethe resist. In view of this, the gas should not be dissolved at anexcessively high concentration in the solution. Ozone and hydrogenperoxide, which are strong oxidizing gases, should be dissolved at aconcentration of 100 ppm or less in the oxidizing developing solution.On the other hand, oxygen and carbon monoixide, which are relativelyweak oxidizing gases, should be dissolved at the saturationconcentration or a lower concentration. In the present embodiment,oxygen is dissolved at a concentration of 10 ppm in the developingsolution.

Moreover, any one of a reducing solution, oxidizing solution, and purewater may be used as the cleaning solution, as long as a sufficienteffect can be obtained. Furthermore, when the cleaning effect isenhanced, these solutions may be appropriately combined. Particularly, amethod of supplying the reducing solution onto the substrate andsubsequently supplying pure water to perform the cleaning is preferable.This method further enhances the cleaning effect.

Furthermore, the method preferably includes: supplying oxidizingsolutions such as ozonated water; cleaning the substrate; andcontinuously cleaning the substrate with reducing solutions such asdissolved hydrogen water. In this method, organic matter which isdeposited in a process of replacing the developing solution with thecleaning solution and possibly adhere to the substrate aredecomposed/removed, and therefore the cleaning effect is enhanced.

When the oxidizing developing solution with an appropriate amount ofoxygen dissolved therein is used as the developing solution to performthe developing, roughly three actions are obtained during thedeveloping. A first action includes oxidization of the reaction productgenerated immediately after the start of the developing by the oxygenmolecules in the developing solution and decomposition of the reactionproduct by the oxidization. A second action includes the oxidization ofthe resist surface in the developing solution. A third action includesalleviation of size growth by cohesion of the reaction product generatedduring the developing. The above-described three actions will bedescribed hereinafter in detail.

(1) First Action: Oxidization/Decomposition of Reaction Product

An exposed, heat-treated positive photosensitive resist film is immersedin the developing solution, an exposed portion is dissolved, and anunexposed portion is hardly undissolved. When the exposed portion of thephotosensitive resist film contacts the developing solution in thedeveloping process, the dissolution starts and simultaneously thereaction product by neutralization is generated. The reaction product ismixed into in the developing solution, but a part of the product isweakly bonded to a resist resin without being diffused between resistpatterns, and remains between the resist patterns. The reaction productremaining between the resist patterns coheres, and forms an organicparticle. In a region in which the exposed portion has a large area anda pattern size is fine, many organic particles exist, the concentrationof alkali ions in the developing solution is lowered in the vicinity ofthe particles. As a result, the developing speed of the resist patternlocally slows in the vicinity of the particles, and the uniformity ofthe size of the resist pattern after the development is deteriorated.Moreover, when these organic particles adhere to the resist surface andcohere, the particles possibly remain as defects on the resist patternafter the development.

As shown in FIG. 3A, during the development, oxygen molecules 144 in adeveloping solution 142 collide with reaction products 143 caused by thedevelopment. It is further considered that the reaction products 143are, to a certain extent to form oxide 145, and the oxide 145 isdecomposed to form decomposed matter 146. A molecular mass of thedecomposed matter 146 becomes low. Therefore, the decomposed matter 146has a mass sufficiently reduced, and is therefore easily diffused in thesolution. Additionally, in FIG. 3A, reference numeral 140 denotes asubstrate, 141 denotes a positive photosensitive resist film, 141 adenotes an exposed portion, and 141 b denotes an unexposed portion.

When the oxygen molecules 144 having a sufficient concentration exist inthe developing solution 142, the reaction products 143 are oxidized anddecomposed with an enhanced ratio. As a result, the diffusion of thereaction products 143 into the developing solution 142 is promoted, andthe amount of organic particles collecting between the patterns of theresist 141 or in the vicinity of the surface of the resist 141 isreduced. Moreover, it can be expected that the alkali ions in thedeveloping solution 142 are easily diffused in a reaction surface of theexposed portion 141 a. As a result, local drops in the alkali ionconcentration of the developing solution are inhibited, and developingspeed unevenness in the substrate surface can be inhibited from beinggenerated. Therefore, as shown in FIG. 3B, the uniform pattern of theresist film 141 is formed. Moreover, the organic particles areoxidized/decomposed, and diffused in the solution. Therefore, aprobability at which an organic matter adhesion defect remaining on theresist pattern after the development is generated can remarkably bereduced.

(2) Second Action: Oxidation of Resist Surface

During the development, a strong affinity works between the molecules onthe exposed portion surface of the photosensitive resist film and thealkali ions in the developing solution. On the other hand, when themolecules of the unexposed portion surface of the photosensitive resistfilm and the alkali ions in the developing solution approach each other,free energy becomes high, and a repulsive force operates. Therefore, ina region in which the ratio of the exposed portion to the unexposedportion of the resist film differs, the affinity received from theresist surface by the alkali ions largely differs. As a result, theamount of alkali ions reaching the resist film surface changes with theratio of the exposed portion to the unexposed portion, and the progressof the development also changes. That is, the developing speed differswith place on the resist surface. Therefore, the uniformity of theresist pattern size after the development in the plane is deteriorated.When the oxygen molecules dissolved in the developing solution contactthe resist surface during the development, the resist film surface isknown to be oxidized. In the resist film surface of the unexposedportion in which the developing does not progress, the side wall of thepattern formed with the progress of the developing, and the like,carboxylic acid is generated by the oxidation by the oxygen molecules.The generated carboxylic acid has a relatively strong affinity with thealkali ions. Therefore, a difference in the affinity between the exposedportion and the unexposed portion is alleviated. As a result, adifference of the developing speed locally generated during thedeveloping is reduced, and the uniformity within the plane is enhanced.

Moreover, there is a problem in the developing process that the defectis generated by the reaction product adhering to the resist surface.This is because the affinity due to intermolecular interaction worksbetween the resist surface and the particle surface of the coheringreaction product. The oxygen molecules oxidizes the resist surfaceduring the development, generates carboxylic acid, and changes theaffinity by the intermolecular interaction in the resist surface and thesurface of the reaction product particle. As a result, the reactionproduct particles possibly forming the defect after the development areinhibited from adhering to the resist surface. Therefore, by thedeveloping using the oxidizing developing solution, the organic matterdefect adhering to the resist pattern after the development can largelybe inhibited from being generated in the developing process.

(3) Third Action: Inhibition of Cohesion of Reaction Product

During the development, the generated reaction products cohere in thedeveloping solution, and the size gradually increases. In the firstaction, it has been described that the generated reaction products areoxidized and decomposed by oxygen in the developing solution. However,the amount of eluted reaction products, and further the number ofmolecules included in each reaction product is large as compared withthe number of oxygen molecules in the solution. Therefore, it isimpossible to oxidize and decompose all the products. The reactionproducts remaining undecomposed can be a core of cohesion in thesolution. When these molecules exist the reaction products in thesolution start cohering to the core. This cohesion is caused because theaffinity of the reaction products is relatively strong under theenvironment, that is, particularly in the developing solution. That is,the molecules constituting the surface of the reaction product do notdirectly exert an interaction on the surface molecules of anotherreaction product present in the periphery. The molecules indirectlyattract one another via the ions and molecules in the developingsolution in order to further stabilize the state. Since the developingsolution contains oxygen molecules, energy in an interface of thereaction product and developing solution can be lowered. Therefore, theaffinity acting on the reaction products apparently is weakened. Evenwhen the molecules as the prospective cores of cohesion exist in thesolution, the probability of the cohesion starting actually from thecore is sufficiently low as compared with when oxygen is not containedin the solution. Therefore, in the developing solution containingoxygen, the probability of the cohesion by the reaction products isreduced. Moreover, even for the reaction products starting to cohesion,since the affinity causing the cohesion is weakened, the growth speedslows. Therefore, the cohesion of the reaction products is inhibited.

Moreover, the difference of the affinity for the developing solutionbetween the exposed portion and the unexposed portion is alleviated, andfurther the diffusion of the reaction products into the solution ispromoted. From this action, in the agitating process during thedevelopment, even when a slight shaking force is applied, the agitatingcan efficiently be performed.

Results of an experiment actually performed by the inventor, et al. tocheck the effectiveness of the oxidizing developing solution will bedescribed hereinafter.

The experiment was carried out according to the procedure described inthe first embodiment. Moreover, for reference, the developing by theconventional developing solution, and the developing by the unagitateddeveloping solution were carried out.

As the oxidizing developing solution, the solution manufactured bypassing the deaerated developing solution through the dissolved filmwith the oxygen gaseous molecules introduced therein was used.Additionally, for a developing time, all the developing was performedunder the same conditions. The results are shown in Table 1.

TABLE 1 Linear 3σ Number of Width (nm) (nm) defects Conventional 201.59.2 245 developing solution Oxidizing 195.3 6.3 23 developing solution(without agitating) Oxidizing 192.7 4.0 18 developing solution (withagitating)

As compared with the developing method using the conventional developingsolution, in the developing method using the oxidizing developingsolution, the value 3σ indicating size uniformity is enhanced.Furthermore, when the oxidizing developing is used and the developingsolution is agitated during the developing, the size uniformity isremarkably enhanced. Moreover, after the development, the organic matteradhering defect numbers of these samples were measured. In thedeveloping method using the conventional developing solution, 245defects were measured in the whole surface of the substrate. However,when the oxidizing developing solution was used, 23 defects were foundwithout the agitating process, and 18 defects were found with theagitating process. It was possible to remarkably reduce the number. Fromthese results, the effects of the oxidizing developing solution andagitating were confirmed.

Moreover, when the oxidizing developing solution was used to perform thedeveloping, the pattern size was found to decrease by about 2 to 3%.When the agitating process was further added, the pattern size was foundto decrease by about 5%. The developing time for obtaining the desiredpattern size was checked. It was found that the developing time wasreduced to ¾ of the conventional developing time during the developingperformed using the oxidizing developing solution and that the time wasreduced to ⅔ of the conventional time with the addition of the agitatingprocess. Therefore, when the oxidizing developing solution is used todeveloping process, it is possible to shorten the process time andenhance the throughput in the developing process by 25 to 30%.

(Second Embodiment)

The developing method of supplying the reducing developing solution asthe developing solution to the surface of the substrate by thedeveloping unit shown in FIG. 1 will next be described with reference toFIGS. 4A to 4F. FIGS. 4A to 4F are process diagrams showing thedeveloping process according to a second embodiment.

First, the substrate is coated with the anti-reflection coating, andchemically amplified resist, and the desired pattern is reducedprojection exposure via the reticle for exposure by a KrF excimer laser.After the substrate is heat-treated (PEB), the substrate is conveyed tothe developing unit, and held on the fixed base 101 (FIG. 4A).

Subsequently, the developing solution supply nozzle 111 is scanned fromone end to the other end of the substrate 100, and the reducingdeveloping solution is discharged in a curtain form so that a developingsolution film 211 is formed on the substrate 100 (FIG. 4B). Thedeveloping solution generated by adding the surface active agent to TMAHhas heretofore been used. In the present embodiment, the reducingdeveloping solution formed by passing the developing solution throughthe reducing gas dissolved film 115 b with the hydrogen gas generated inthe reducing gas generator 115 a introduced therein is used.

Subsequently, after moving downwards the current plate 104 disposed onthe substrate 100, the current plate 104 is rotated at 3000 rpm and theair current is formed on the substrate 100. The developing solution film211 is agitated by the formed air current (FIG. 4C). When the developingsolution film 211 is agitated, the concentration unevenness of thedeveloping solution caused by the reaction product in the developingsolution film 211 is eliminated.

After the elapse of the time in which the desired pattern is obtained,the substrate 100 is rotated, and ozonated water (oxidizing solution)212 (pure water containing ozone) is discharged onto the substrate viathe cleaning solution supply nozzle for ten seconds (FIG. 4D). Thedeveloping solution, reaction products, and the like are rinsed with theozonated water, and the developing of the resist film is stopped.Ozonated water is a solution in which ozone gas, having oxidizingproperties is dissolved in pure water. When ozonated water is suppliedas the cleaning solution to the substrate 100, the organic particlesremaining in the developing solution are oxidized/decomposed, andadditionally, the resist film surface exposed after the development isoxidized. The organic particles are prevented from adhering to theresist surface, and the defects are inhibited from being generated inthe resist surface.

After the cleaning, the substrate 100 is rotated at high speed, theozonated water 212 on the substrate 100 is thrown off by the centrifugalforce, and the substrate 100 surface is dried (FIG. 4E).

The developing process of the resist is ended by the above-describedtreatment, and the substrate 100 is collected (FIG. 4F).

Additionally, the forming method of the developing solution film 211 isnot limited to the method of scanning the developing solution supplynozzle 111 to the other end from one end of the substrate and formingthe solution film. Examples of other methods are a method of relativelyrotating the developing solution supply nozzle 111 and substrate 100 anddischarging the developing solution via the nozzle 111 to form thedeveloping solution film 211, a method of spraying the developingsolution uniformly onto the whole surface of the substrate 100 via thespray nozzle to form the developing solution film, and the like. Themethod is not limited as long as the developing solution can beuniformly discharged onto the substrate and the film can uniformly beformed. Moreover, the agitating method of the formed developing solutionfilm includes: rotating the current plate on the substrate to generatethe air current. However, examples of other methods are: a method ofrotating the substrate, a method of vibrating the solution by vibrationfrom the outside, and the like. Any method may be used as long as themethod has the action of fluidizing the developing solution on the wholesubstrate surface.

As the reducing developing solution, a hydrogen molecule dissolveddeveloping solution obtained by passing the deaerated developingsolution through the reducing gas dissolved film with a hydrogen gaseousmolecule introduced therein and dissolving the hydrogen gaseous moleculein the developing solution is used. However, when similar effect isproduced, not only hydrogen but also reducing gases such as H₂S, HNO₂,and H₂SO₃ may be used as the gaseous molecule to be dissolved. Moreover,instead of passing the developing solution through the dissolved filmand dissolving the molecule, the pure water with the reducing gasdissolved therein may be mixed with the developing solution having theconcentration increased beforehand to generate the reducing developingsolution.

Moreover, any one of the reducing solution, oxidizing solution, and purewater may be used as the cleaning solution, as long as sufficient effectcan be obtained. Furthermore, when the cleaning effect is enhanced,these solutions may appropriately be combined. Particularly, the methodof supplying the oxidizing solution and subsequently supplying the purewater to clean the substrate is preferable. Moreover, particularlypreferable methods are: supplying the oxidizing solutions such as theozonated water onto the substrate to clean the substrate; andcontinuously cleaning the substrate with the reducing solutions such asthe dissolved hydrogen water.

The action of using the reducing developing solution to develop theimage in the second embodiment will be described.

When the reducing developing solution with the gas having reducingproperties dissolved at an appropriate concentration therein is used asthe developing solution to develop the image, roughly three actions areobtained during the development as follows.

1. Resist film surface property modification by the hydrogen molecules

2. Promotion of diffusion of the reaction product into the developingsolution

3. Prevention of re-adhesion of the reaction product onto the resistfilm surface

These three actions will be described hereinafter in detail.

(1) Resist Surface Property Modification

For the exposed and heat-treated positive photosensitive resist film,during the development, the affinity between the molecules of theexposed portion surface of the resist and the alkali ions in thedeveloping solution is different in strength from the affinity betweenthe molecules of the unexposed portion surface of the resist and thealkali ions. Therefore, in the region in which the area ratio of theexposed portion to the unexposed portion on the resist film to betreated differs, the affinity received from the resist surface by thealkali ions in the developing solution largely differs. As a result, theamount of the alkali ions flowing into the resist surface changes withthe area ratio of the exposed portion to the unexposed portion, and theprogress speed of the development also changes. That is, the developingspeed differs with the place on the resist surface to be treated.Therefore, the uniformity of the resist pattern size after thedevelopment is deteriorated.

As shown in FIG. 5A, during the development, hydrogen molecules 244dissolved in a developing solution 242 have an action of reducing thesurface of a resist film 241 upon contacting the resist film 241 surfaceon a substrate 240. Therefore, the difference of the affinity of thedeveloping solution for the surface of an exposed portion 241 a from theaffinity of the surface of a reduced resist film 241 c of an unexposedportion 241 b for the developing solution is alleviated. As a result,the difference of the developing speed locally generated during thedevelopment is reduced, and the size uniformity after the development isenhanced.

(2) Promotion of Diffusion of Reaction Products into Developing Solution

For the positive resist film, in the developing process, the exposedportion is dissolved in the developing solution, whereas the unexposedportion has a property of being hardly dissolved. This is because forthe exposed portion of the photosensitive resist, the reaction productsgenerated by the neutralization with the developing solution aredissolved in the developing solution. However, when the area ratio ofthe exposed portion to the unexposed portion on the resist differs, thegenerated amount of the reaction products largely differs. For example,with an isolated pattern, since a broad exposed portion exists in theperiphery, the amount of reaction products is remarkably large ascompared with a line & space (L/S) pattern. Since the generated reactionproducts easily remain between the patterns, and are not easily diffusedin the developing solution, the alkali concentration of the developingsolution around the isolated pattern is low as compared with the alkaliconcentration of the L/S pattern. Therefore, a time necessary forforming the desired pattern size differs with the pattern. That is,since the time required for the development differs with the differenceof the pattern, a sparse/dense size difference of the resist patternsize after the development disadvantageously increases. For thesparse/dense difference, it is difficult to completely remove thereaction products only by agitating the products in the course of thedevelopment and improve the size difference.

As shown in FIG. 5A, when the hydrogen molecules 244 added to thedeveloping solution are reduced/reacted with the reaction products 243generated by the neutralization to form a reduced matter 245, a surfacepotential of the reduced matter 245 changes. Thereby, a repulsive forceis generated between the reduced matter 245, thus preventing cohesiontherein, so that the reaction products are easily diffused in thedeveloping solution, and the development progresses. That is, when thesurface potential of the reaction products 243 is changed by thehydrogen molecules 244, the sparse/dense size difference generated bythe alkali concentration difference of the developing solution 242 canlargely be reduced, and the uniform pattern of the resist 241 can beformed as shown in FIG. 5B.

(3) Alleviation of Cohesion of Reaction Product

Even when the reaction products generated by the developing reaction areonce diffused in the developing solution, the reaction products laterpossibly cohere by the interaction acting among the reaction products inthe solution. Therefore, the problem is that the cohering reactionproducts again adhere onto the resist and form the defects.

When the hydrogen molecules are dissolved in the developing solution,the hydrogen molecules have an effect of modifying the reaction productsor the surface state of the resist. Thereby, the degree of theintermolecular interaction acting among the reaction products can beweakened, and the hydrogen molecules in the developing solution caninhibit the reaction products from cohering. That is, the amount of thereaction products again adhering to the resist surface is decreased, andthe amount of defects caused by the re-adhesion of the cohering reactionproducts onto the resist surface are largely suppressed.

Moreover, the difference of the affinity of the exposedportion/unexposed portion for the developing solution is alleviated.Further from an action of promoting the diffusion of the reactionproducts into the solution, in the agitating process during thedevelopment, when only a slight shaking force is applied, the solutioncan efficiently be agitated.

The results of the experiment actually performed by the inventor, et al.will be described hereinafter.

The experiment was carried out according to the procedure described inthe second embodiment. Moreover, for reference, the development by theconventional developing solution, and the development in which thereducing developing solution was used to development without agitatingthe solution during the development were carried out.

As the reducing developing solution, the solution obtained by passingthe hydrogen gaseous molecules through the deaerated developing solutionwas used. The results are shown in Table 2.

TABLE 2 CD 3σ Number of (nm) (nm) defects Conventional 201.5 9.2 245developing solution Reducing developing 194.9 6.9 86 solution (withoutagitation) Reducing developing 192.2 4.1 58 solution (with agitation)agitating

As compared with the developing method by the conventional developingsolution, in the developing method by the reducing developing solution,the value of 3σ indicating the size uniformity is enhanced. Furthermore,when the reducing development is used and the developing solution isagitated during the development, the size uniformity is remarkablyenhanced. Moreover, after the development, the organic matter adheringdefect numbers of these samples were measured. In the developing methodby the conventional developing solution, 245 defects were measured inthe whole surface of the substrate. However, when the oxidizingdeveloping solution was used, 86 defects were found without theagitating process, and 58 defects were found with the agitating process.It was possible to reduce the number.

Moreover, when the reducing developing solution was used to perform thedevelopment, the pattern size was found to decrease by about 2 to 3%.When the agitating process was further added, the pattern size was foundto decrease by about 5%. The developing time for obtaining the desiredpattern size was checked. It was found that the developing time wasreduced to ¾ of the conventional developing time during the developmentperformed using the reducing developing solution and that the time wasreduced to ⅔ of the conventional time with the addition of the agitatingprocess. Therefore, when the reducing developing solution is used todevelop the image, it is possible to shorten the process time andenhance the throughput in the developing process by 25 to 30%.

(Third Embodiment)

FIG. 6 is a diagram showing a schematic constitution of a resistremoving apparatus according to a third embodiment of the presentinvention.

As shown in FIG. 6, the present apparatus includes a treatment tank 301in which an oxidizing remover 302 described later is stored. When awafer cassette 300 with a plurality of substrates stored therein isimmersed in the oxidizing removing solution 302, the resist on thesubstrate surface is removed.

The present apparatus further includes an oxidizing gas dissolutionmechanism 310 for generating the oxidizing remover 302 stored in thetreatment tank 301. The oxidizing gas dissolution mechanism 310dissolves the oxidizing gas with respect to the deaerated removingsolution stored in a removing solution tank 304, and generates theoxidizing removing solution 302. The generated oxidizing removingsolution is supplied into the treatment tank 301 via a removing solutionsupply nozzle 303. The oxidizing gas dissolution mechanism 310 passesthe deaerated removing solution through the an oxidizing gas dissolvedfilm 312 in which the gas generated by an oxidizing gas generator 311 isintroduced, and dissolves the gaseous molecules in the developingsolution.

In the third embodiment, a high-concentration alkaline solution is usedas the remover stored in the remover tank 304. Here, a remover such asaqueous tetra methyl ammonium hydroxide (TMAH) solution is used. Analkali concentration range is preferably not less than 1% and not morethan a saturated concentration. Moreover, the concentration of oxygendissolved in the remover is preferably 10 ppm or more.

A developing solution in which oxygen molecules are dissolved is used asan oxidizing remover. Nonetheless, the gas molecules dissolved in thesolution are not limited to oxygen molecules. Molecules of any otheroxidizing gas, such as ozone, carbon monoxide or hydrogen peroxide, maybe dissolved in the remover if they achieve the same effect as oxygenmolecules. A mixture of a high-concentration developing solution andpure water containing gas molecules dissolved in it may be used as anoxidizing remover.

If the oxidizing remover has too high an oxidizing ability, it willoxidize the layer onto which it has been applied. The remover willdamage the layer. Hence, the gas should not be dissolved in the removerat an excessively high concentration. Ozone and hydrogen peroxide, whichare strong oxidizing gases, should be dissolved at a concentration of100 ppm or less in the oxidizing remover. By contrast, oxygen and carbonmonoxide, which are relatively weak oxidizing gases, should be dissolvedin the oxidizing remover at the saturation concentration or a lowerconcentration.

Moreover, the present apparatus includes a cleaning solution supplynozzle 321 for supplying the cleaning solution transported via acleaning solution transport line 322 into the treatment tank 301 afterremoving a resist residual from the substrate surface.

The substrate is coated with the anti-reflection coating and chemicallyamplified resist, and the desired pattern is reduced projection exposurevia the reticle for exposure by a KrF excimer laser. After the substrateis heat-treated, the resist pattern is formed by a developing treatment.Thereafter, the resist pattern is used as a mask to etch the pattern.The substrate stored in the wafer cassette 300 is immersed in theoxidizing remover 302 in the treatment tank 301, and the remainingresist residual is removed. After discharging the oxidizing remover 302from the treatment tank 301, the pure water is supplied into thetreatment tank via the cleaning solution supply nozzle 321, and thesubstrate in the wafer cassette 300 is cleaned. Additionally, after theetching, ashing may be performed, and then the removing process may beperformed.

In the third embodiment, the pure water is used as the cleaning solutionafter the alkali treatment. However, if the cleaning effect is enhanced,the oxidizing solutions such as the ozonated water and/or the reducingsolutions such as the dissolved hydrogen water may be used as thecleaning solution.

When the oxidizing remover with oxygen dissolved therein is used as theresist remover to remove the resist residual, the following action isobtained.

Oxidation/Decomposition/Removing of Resist Film After Etching

The resist residual exists on the substrate after the etching. Most partof the resist is dissolved by the high-concentration alkaline solution.However, when the oxygen molecules are dissolved, during the removing,the oxygen molecules in the remover collide against the resist residual,and are considered to oxidize and decompose the resist residual with acertain probability. Since a molecular mass of the decomposed resistresidue becomes low. Therefore, the decomposed resist residue has a masssufficiently reduced, the residue is easily diffused into the remover.The probability of generation of organic matter adhering defects (resistresidue) on the substrate after the removing can remarkably be reduced.

The results of the experiment performed in order to check the effect ofthe oxidizing remover by the inventor, et al. will be describedhereinafter.

After the etching on conditions shown in the following table, theremoving treatment was performed. The substrate was immersed in thealkaline solution for a predetermined time, rinsed with a ultrapurewater, and dried, and a removing state was observed by an electronmicroscope. The results are shown in Table 3.

TABLE 3 Developing removing solution Addition condition removing TypeConc. Type Conc. Temp. Time state TMAH 2% None  0 ppm 40° C. 5 min. ΔTMAH 2% None  0 ppm 40° C. 5 min. ◯ TMAH 2% Oxygen 20 ppm 40° C. 5 min.⊚ Δ: almost remaining ◯: partially remaining ⊚: completely removed

From the above, it is seen that the resist residual removed by theremover obtained by dissolving oxygen as the oxidizing gas in thehigh-concentration alkaline solution can sufficiently be removed.

Additionally, the gas to be dissolved in the remover is not limited tothe oxidizing gas. For example, the reducing gas may be used as long asthe similar effect is obtained as a result. For example, when thehydrogen molecules are dissolved, the concentration is preferably about1 PPM.

Additionally, when the resist residual is removed, the method is notlimited to the above-described immersing method. A treatment ofsupplying the remover onto the substrate via the solution supply nozzle(a spray nozzle or a straight nozzle), and supplying the solution via arinse nozzle after the treatment may be used. Moreover, during thetreatment, a heating treatment, or a agitating treatment by anultrasonic wave, or the like may be carried out.

(Fourth Embodiment)

FIG. 7 is a diagram showing the schematic constitution of the developingunit according to a fourth embodiment of the present invention.

As shown in FIG. 7, the developing unit includes the fixed base 101 ontowhich the substrate 100 is fixed, the rotation mechanism 102 forrotating the fixed base 101 and substrate 100, a solution supply nozzle411 for discharging the dissolved hydrogen water and developingsolution, and a driving mechanism for scanning the solution supplynozzle 411 onto the substrate 100. Furthermore, the developing unitincludes the current plate 104 disposed as a agitating mechanism foragitating the developing solution on the substrate during thedevelopment above the substrate, and an elevator mechanism of thecurrent plate 104. Additionally, the developing unit includes a cleaningsolution supply nozzle 421, disposed above the substrate 100, forsupplying the cleaning solution transported via a cleaning solutiontransport line 422 onto the substrate 100 surface.

The solution supply nozzle 411 has a plurality of independent supplyports, and discharges the dissolved hydrogen water and developingsolution independently via the respective supply ports. Moreover, duringthe discharging of the solution, the solution supply nozzle 411 scans inone direction from the outside of the periphery of the substrate 100onto the substrate 100 and discharges the solution. The current plate104 of the agitating mechanism is a flat rotary disc having a suctionhole in the middle thereof. The solution supply nozzle 411 is notlimited to the above-described embodiment, as long as the solution canbe uniformly supplied onto the substrate. Moreover, the agitatingmechanism is not limited to the above-described embodiment, as long asthe mechanism has an action of agitating the developing solution.Moreover, when uniform development is sufficiently performed, theagitating mechanism is not needed.

The developing method in which the developing unit is used will next bedescribed with reference to FIGS. 8A to 8G. FIGS. 8A to 8G are processdiagrams showing the developing method according to the fourthembodiment.

The substrate 100 is coated with the anti-reflection coating, andchemical amplified resist, and the desired pattern is reduced projectionexposure via the reticle for exposure by a KrF excimer laser. After thesubstrate 100 is heat-treated (PEB), the substrate is conveyed to thedeveloping unit, and held on the fixed base 101 (FIG. 8A).

In the conventional method, the development has heretofore beenperformed, in general, by subsequently discharging the developingsolution directly onto the substrate to start the development, ordischarging and throwing off the pure water by low-speed rotation toform a thin water layer on the substrate surface, wetting the substratebeforehand and enhancing the apparent wettability of the substratesurface to the developing solution, and subsequently discharging thedeveloping solution onto the substrate.

In the fourth embodiment, the solution supply nozzle 411 is scanned onthe substrate 100 in one direction from the outside of the periphery ofthe substrate 100, and about 1 ppm of the dissolved hydrogen water isdischarged via the nozzle so that a dissolved hydrogen water film 431 isformed on the substrate 100 surface (FIG. 8B). The whole surface of thesubstrate 100 is exposed to the solution film of the dissolved hydrogenwater 431 for five to 30 seconds and only the resist surface is reduced.Additionally, the dissolved hydrogen water is a solution obtained bydissolving hydrogen in the pure water.

Subsequently, after an elapse of five to 30 seconds after the dissolvedhydrogen water film 431 is formed, the substrate 100 is rotated at 2000rpm, and the dissolved hydrogen water film 431 formed on the substrate100 is thrown off and removed (FIG. 8C).

Subsequently, the solution supply nozzle is scanned from one end to theother end of the substrate, and the developing solution is dischargedvia the nozzle 411, so that a solution film of the developing solution432 is formed on the 100 (FIG. 8D).

After the elapse of the time in which the desired pattern is obtained,the ultrapure water is discharged as a cleaning solution 433 onto thesubstrate 100 via the cleaning solution supply nozzle 421 for tenseconds (FIG. 8E). The developing solution, dissolved products, and thelike are rinsed with the ultrapure water, and the developing of theresist film is stopped.

Subsequently, after the cleaning, the substrate is rotated at the highspeed, the cleaning solution 433 is thrown off, and the substrate 100surface is dried (FIG. 8F).

As described above, the developing process is ended, and the substrateis collected (FIG. 8G).

Moreover, the ultrapure water is used as the cleaning solution in thefourth embodiment. However, any one of the reducing solution, oxidizingsolution, and pure water may be used, as long as the sufficient effectcan be obtained. Furthermore, when the cleaning effect is enhanced,these solutions may appropriately be combined. As particularlypreferable methods, there are a method of supplying the reducingsolution and subsequently supplying the pure water to perform thecleaning, a method of supplying the oxidizing solution such as theozonated water to clean the substrate and continuously cleaning thesubstrate with the reducing solution such as the dissolved hydrogenwater, and the like.

An action of the pretreatment using the reducing solution will need bedescribed.

For the exposed and heat-treated positive photosensitive resist, duringthe development, the affinity between the molecules of the exposedportion surface of the resist and the alkali ions in the developingsolution is different in strength from the affinity between themolecules of the unexposed portion surface of the resist and the alkaliions in the developing solution. When the surface of the resist istreated by the dissolved hydrogen water before the development,carboxylic acid present in the exposed portion on the resist surface isreduced and changed to a hydroxyl group, and the affinity for the purewater and developing solution drops. Thereby, the difference of theaffinity for the developing solution between the exposed portion surfaceand the unexposed portion surface can be alleviated. Usually, in a localregion in which the exposed and unexposed portions are densely mixed, inaccordance with the area ratio of the exposed portion/unexposed portion,the affinity received by the alkali ions in the developing solution alsodiffers, and the difference of the developing speed is generated duringthe development. Since the development pretreatment by the dissolvedhydrogen water is performed, the difference of the affinity in the localregion is eliminated. As a result, the developing speed becomessubstantially constant irrespective of pattern constitutions by theplace such as the area ratio of the exposed portion/unexposed portion onthe substrate. Therefore, the size uniformity after the development isenhanced. Even when the developing method by the hydrogen moleculedissolved developing solution described in the second embodiment isused, a similar effect is obtained. However, the developmentpretreatment does not proceed simultaneously with the development. Sincethe treatment is performed beforehand, the effect of surface propertymodification is particularly focused. In actual fact, in the developmentpretreatment using the dissolved hydrogen water, rather than the actionof hydrogen during the development by the hydrogen molecule dissolveddeveloping solution, the effect of the resist surface propertymodification remarkably appears, and the effect of alleviation of thedifference of the affinity sensed by the alkali ions in the developingsolution from the unexposed portion becomes more remarkable. Formeasurement of a contact angle, when the dissolved hydrogen water havinga concentration of 1 PPM is exposed to the resist surface for 15seconds, the contact angles of the exposed portion and unexposed portionto the developing solution are substantially equal.

Additionally, after the pretreatment using the dissolved hydrogen water,the substrate is rotated at 2000 RPM, and the dissolved hydrogen waterfilm is removed. However, the film is not completely removed, thesolution film of the dissolved hydrogen water is slightly left on thesubstrate, and continuously the developing solution film is formed onthe dissolved hydrogen water film. Thereby, the dissolved hydrogen waterand developing solution can be mixed on the substrate. In addition tothe effect of the fourth embodiment, the effect described in the secondembodiment is also obtained.

The result of an experiment actually performed by the inventor et al. inwhich the reducing solution is used to perform the pretreatment will bedescribed hereinafter.

The experiment was carried out according to the procedure described inthe fourth embodiment. Changes of size dispersions of the resist pattern(0.15 μmL/S) in the substrate surface with respect to a dissolvedhydrogen water treatment time are shown in Table 4.

TABLE 4 Linear width (nm) 3σ (nm) Without dissolved 202.1 9.2 hydrogenwater pretreatment With dissolved 198.4 4.8 hydrogen water pretreatment

When the dissolved hydrogen water pretreatment is performed, the sizedispersion is clearly reduced, and the uniformity of the size, that is,the uniformity of development is enhanced.

In the fourth embodiment, the dissolved hydrogen water is used as thesolution having reducing properties. However, the solution is notlimited to the dissolved hydrogen water, as long as the solution has areducing action. For example, it is considered that the aqueous solutioncontaining H₂S, HNO₃, H₂SO₃, and the like, the hydrogen peroxide water,and the like have a similar effect.

(Fifth Embodiment)

FIG. 9 is a diagram showing the schematic constitution of the developingunit according to a fifth embodiment of the present invention.Additionally, in FIG. 9, the same components as those of FIG. 1 aredenoted with the same reference numerals, and a detailed description isomitted.

As shown in FIG. 9, the developing unit includes a developing solutionsupply nozzle 511 for supplying the developing solution to the substrate100, a solution supply nozzle 512 for supplying a solution describedlater, and a driving mechanism (not shown) for scanning the developingsolution supply nozzle 511 and solution supply nozzle 512.

During the discharging of the developing solution, the developingsolution supply nozzle 511 scans in one direction from the outside ofthe periphery of the substrate 100 over the substrate, and therebysupplies the developing solution to the whole surface of the substrate100. Moreover, during the discharging of the solution, the solutionsupply nozzle 512 scans in one direction from the outside of theperiphery of the substrate 100 over the substrate, and thereby suppliesthe solution to the whole surface of the substrate 100.

The constitution of a solution supply system for supplying the solutionto the developing solution supply nozzle 511, solution supply nozzle512, and cleaning solution supply nozzle 121 will next be described withreference to FIG. 10. FIG. 10 is a diagram showing the schematicconstitution of the solution supply system of the developing unit shownin FIG. 9.

The developing solution can be directly supplied to the developingsolution supply nozzle 511 from a developing solution supply tank 531.The pure water supplied from a pure water source 532 is supplied to thesolution supply nozzle 512 directly, or via an oxidizing gas dissolutionmechanism 540 or a reducing gas dissolution mechanism 550. The oxidizinggas dissolution mechanism 540 introduces the oxidizing gas generated byan oxidizing gas generator 541 into an oxidizing gas dissolved film 542,passes the pure water through the oxidizing gas dissolved film 542, anddissolves the oxidizing gas in the pure water. Moreover, the reducinggas dissolution mechanism 550 introduces the reducing gas generated by areducing gas generator 551 into a reducing gas dissolved film 552,passes the pure water through the reducing gas dissolved film, anddissolves the reducing gas in the pure water.

Additionally, in the solution supply system shown in FIG. 10, theconstitution includes two mechanisms, that is, the oxidizing gasdissolution mechanism 540 and reducing gas dissolution mechanism 550,but only one mechanism may be disposed where necessary. Moreover, whenthe gas can be in-line supplied, the gas generators 541, 551 areunnecessary.

The substrate is coated with the anti-reflection coating, and chemicallyamplified resist, and the desired pattern is reduced projection exposurevia the reticle for exposure by a KrF excimer laser. After the substrateis heat-treated, the development is performed in a sequence shown in aflowchart of FIG. 11. Moreover, FIGS. 12A to 12I show process diagrams.FIG. 11 is a flowchart showing the developing method according to thefifth embodiment of the present invention. FIGS. 12A to 12I are processdiagrams showing the developing process according to the fifthembodiment of the present invention.

The developing method of the fifth embodiment will be described in orderwith reference to the flowchart of FIG. 11 and process diagrams of FIGS.12A to 12I.

(Conveying and Holding of Substrate: Step S501)

The substrate 100 is conveyed into the developing unit, and held ontothe fixed base 101 (FIG. 12A).

(Pretreatment Step: Step S502)

Subsequently, the cleaning solution supply nozzle 121 dischargesozonated water as the oxidizing solution to form the solution film ofozonated water 561 on the substrate (FIG. 12B). The ozonated water 561is generated by passing the pure water through the oxidizing gasdissolved film 542 in which ozone generated by the oxidizing gasgenerator 541 is introduced. Thereafter, the substrate 100 is rotated,the ozonated water 561 is thrown off, and the substrate 100 surface isdried (FIG. 12C).

(Developing Solution Film Forming Step: Step S503)

Subsequently, the developing solution supply nozzle 511 is scanned fromone end to the other end of the substrate 100, the developing solutionis discharged in a curtain form, and a developing solution film 562 isformed on the substrate 100 (FIG. 12D).

(Solution Supply Step: Step S504)

Subsequently, the solution supply nozzle 512 is scanned from one end tothe other end of the substrate, the ozonated water as the oxidizingsolution is discharged in a curtain form, and an ozonated water film 563is formed on the developing solution film 562 (FIG. 12E).

(Agitating Step: Step S505)

After the current plate 104 on the substrate is moved downwards, thecurrent plate 104 is rotated to form an air current on the substrate 100surface, and the developing solution film 562 and ozonated water film563 are agitated by the air current (FIG. 12F). By the agitating, thedeveloping solution film 562 and ozonated water film 563 formed on thesubstrate 100 are sufficiently mixed, and the concentration unevennessof the developing solution caused by the reaction products in thedeveloping solution film 562 is removed.

(Cleaning Step: Step S506)

After an elapse of time for obtaining the desired pattern, the substrate100 is rotated and the cleaning solution supply nozzle 121 dischargesthe dissolved hydrogen water as the reducing solution onto the substrate100. The dissolved hydrogen water washes away the developing solution,reaction products, and the like, and the development is stopped (FIG.12G).

(Drying Step: Step S507)

After the cleaning, the rotation mechanism 102 rotates the substrate 100at the high speed (FIG. 12H), and the substrate is dried (FIG. 12I).

(Convey Out Substrate: Step S508)

As described above, the developing steps end, and the substrate 100 iscollected.

Additionally, the forming method of the developing solution film or theozonated water film is not limited to the method of scanning the lineardeveloping solution supply nozzle from one end to the other end of thesubstrate and forming the solution film. Examples of the method includea method of relatively rotating the linear nozzle with respect to thesubstrate on the substrate and discharging the solution to form thesolution film, a method of spraying the solution uniformly onto thewhole surface of the substrate via the spray nozzle to form the solutionfilm, and the like. The method is not limited as long as the solutionfilm can uniformly be formed on the substrate. Moreover, examples of theagitating method of the formed solution film include a method ofrotating the substrate, a method of vibrating the solution by a vibratorfrom the outside, and the like. Any method may be used as long as themethod has the action of fluidizing the developing solution on the wholesubstrate surface.

In the pretreatment step and solution supply step, the ozonated waterobtained by passing ozone gaseous molecules through the dissolved filmand dissolving the molecules in pure water is used as the oxidizingsolution. However, as long as a similar effect is produced, the gaseousmolecules to be dissolved are not limited to ozone, and oxidizing gasessuch as oxygen, carbon monoxide, and hydrogen peroxide may be used.

In the present embodiment, the oxidizing solution and the developingsolution are applied to the substrate and are agitated together on thesubstrate, thereby forming a film of oxidizing developing solution. Ifthe film, thus formed, has too high an oxidizing ability, it willoxidize and decompose not only the reaction product (later described),but also the resist. The film will be inevitably damage the resist. Inview of this, the gas should not be dissolved in the solution at anexcessively high concentration. Ozone and hydrogen peroxide, which arestrong oxidizing gases, should be dissolved at a concentration of 100ppm or less in the oxidizing developing solution. On the other hand,oxygen and carbon monoixide, which are relatively weak oxidizing gases,should be dissolved at the saturation concentration or a lowerconcentration. In this embodiment, oxygen is dissolved at aconcentration of 10 ppm in the developing solution.

Moreover, as the reducing solution in the cleaning step, the dissolvedhydrogen water obtained by passing hydrogen gaseous molecules throughthe dissolved film and dissolving the molecules in pure water is used.However, when the similar effect is produced, not only hydrogen but alsothe reducing gases such as H₂S, HNO₃, and H₂SO₃ may be used as thegaseous molecules to be dissolved. Moreover, after supplying thereducing solution, to enhance the cleaning effect, the pure water may besupplied to clean the substrate. Moreover, before supplying the reducingsolution, to enhance the cleaning effect, the oxidizing solutions suchas the ozonated water may be supplied. As the cleaning solution, thecombination of the reducing solution, oxidizing solution, and pure watercan appropriately be selected, if the cleaning effect is enhanced.

The action obtained from the pretreatment using the oxidizing solution,and by the developing solution including the oxidizing solution in thefifth embodiment will be described hereinafter.

(1) Action of Oxidizing Solution in Pretreatment Step:Oxidization/Property Modification of Resist Surface

During the development, a strong affinity exists between the moleculeson the exposed portion surface of the photosensitive resist and thealkali ions in the developing solution. On the other hand, when themolecules of the unexposed portion surface of the photosensitive resistand the alkali ions in the developing solution approach each other, freeenergy becomes high, and a repulsive force operates. Therefore, in theregion in which the area ratio of the exposed portion to the unexposedportion on the resist film to be treated differs, the affinity receivedfrom the resist surface by alkali ions largely differs. As a result, theamount of the alkali ions reaching the resist surface changes with thearea ratio of the exposed portion to the unexposed portion, and theprogress of the development also changes. That is, the developing speeddiffers with place on the resist surface to be treated. Therefore, theuniformity of the resist pattern size after the development in the planeis deteriorated. When the ozone molecules in the ozonated water for usein the pretreatment contact the resist surface, the resist surface isknown to be oxidized. Since the resist surface of the exposed/unexposedportion is oxidized by the ozone molecules, carboxylic acid isgenerated. Carboxylic acid has a relatively strong affinity for alkaliions. Therefore, the difference in the affinity between the exposedportion and the unexposed portion is alleviated. As a result, thedifference of the developing speed locally generated during thedevelopment is reduced, and the uniformity within the plane after thedevelopment is enhanced.

Moreover, there is a problem in the developing step that the defect isgenerated by the resist reaction product adhering to the resist surface.This is because the affinity by intermolecular interaction works betweenthe resist surface and the particle surface of the cohering reactionproducts. The ozone molecules can oxidize the resist surface, generatecarboxylic acid, and change the affinity using the intermolecularinteraction in the resist surface and the surface of the reactionproduct particle. The reaction product particles possibly forming thedefect after the development is inhibited from adhering to the resistsurface. Therefore, when the pretreatment is performed with the ozonatedwater using the oxidizing properties, the organic matter defect adheringto the resist pattern after the development can largely be inhibitedfrom being generated in the developing step.

(2-1) First Action of Developing Solution Including Oxidizing Solution:Oxidation/Decomposition of Reaction Product

For the exposed, and heat-treated positive photosensitive resist, duringthe development, the exposed portion is dissolved, and the unexposedportion is hardly dissolved. In the developing step, when the exposedportion of the photosensitive resist contacts the developing solution,the dissolution starts and simultaneously the reaction product byneutralization is generated. The reaction product is diffused in thesolution, but a part of the product is weakly bonded to the resist resinand remains between the resist patterns without being diffused. Thereaction product remaining between the patterns coheres, and forms anorganic particle. In the region in which the exposed portion has a largearea and the pattern size is fine, many organic particles exist, and theconcentration of alkali ions in the developing solution is lowered inthe vicinity of the particles. As a result, the developing speed of theresist pattern locally slows in the vicinity of the particles, and theuniformity of the size of the resist pattern after the development isdeteriorated. Moreover, when these organic particles adhere to theresist surface and cohere, the particles possibly remain as defects onthe resist pattern after the development.

When the developing solution is mixed with the oxidizing solution on thesubstrate, the ozone molecules turn into oxygen molecules. During thedevelopment, the oxygen molecules in the developing solution collidewith the reaction products caused by the development. It is furtherconsidered that the reaction products are oxidized, and decomposed, witha certain probability. A molecular mass of the decomposed reactionbecomes low. Therefore, the decomposed reactions have a masssufficiently reduced, and are therefore easily diffused in the solution.When the oxygen molecules having a sufficient concentration exist in thedeveloping solution, the reaction products are oxidized and decomposedwith an enhanced ratio, the diffusion of the reaction products into thedeveloping solution is promoted, and the amount of organic particlespiled up between the resist patterns or in the vicinity of the resistsurface is reduced. Moreover, it can also be expected that the alkaliions in the developing solution are easily diffused in the reactionsurface. When this effect is strong, the solution does not have to beagitated in the developing step. Needless to say, the diffusion ispromoted by the agitating. As a result, the local drop in the alkali ionconcentration of the developing solution is inhibited, and thedeveloping speed unevenness in the substrate surface can be inhibitedfrom being generated. Moreover, the organic particles areoxidized/decomposed, and diffused in the solution. Therefore, theprobability at which the organic matter adhesion defect remaining on theresist pattern after the development is generated can remarkably bereduced.

(2-2) Second Action of Developing Solution Including Oxidizing Solution:Dissolution Contrast Increase with Concentration Drop of DevelopingSolution

When the developing solution is supplied onto the substrate, theoxidizing solution is supplied, and the solutions are agitated, thefollowing action is obtained. Since the developing solution having ahigh concentration is first supplied, a large part of an exposed regionis developed. However, in this case, a large amount of alkali isconsumed, and the difference of the alkali concentration with the placeis generated. As a result, the developing speed changes with the place,and a size dispersion is generated. Thereafter, even when the alkaliconcentration is restored by the agitating, the concentration entirelyincreases. Therefore, the development is further promoted regardless ofa place where the development progresses or does not progress before theagitating. As a result, the development progresses while the first sizedifference is left.

However, after supplying the developing solution, the oxidizing solutionis supplied and agitated, so that the alkali concentration entirelydrops and the concentration is uniformed in the state. Therefore, wherethe development progresses up to a weak optical image, the developmentis not promoted. Conversely, where the development progresses only to arelatively strong optical image, the development progresses. Adissolution contrast increases in this manner. As a result, the firstsize dispersion resulting from the concentration dispersion is largelyreduced.

(2-3) Third Action of Developing Solution Including Oxidizing Solution:Inhibition of Cohesion of Reaction Products

During the development, the generated reaction products cohere in thedeveloping solution, and the size gradually increases. In the firstaction of the developing solution including the oxidizing solution, ithas been described that the generated reaction products are oxidized anddecomposed by oxygen in the developing solution. However, the amount ofeluted reaction products, and further the number of molecules includedin each reaction product is large as compared with the number of oxygenmolecules in the solution. Therefore, it is impossible to oxidize anddecompose all the products. The reaction products remaining withoutbeing decomposed can be the core of cohesion in the solution. When thereare molecules as the core of cohesion in the solution, the reactionproducts in the solution start cohering centering to on the core. Thiscohesion is caused because the affinity of the reaction products isrelatively strong under this environment, that is, particularly in thedeveloping solution. That is, the molecules constituting the surface ofthe reaction product do not directly exert an interaction on the surfacemolecules of another reaction product present in the periphery. Themolecules indirectly attract one another via the ions and molecules inthe developing solution in order to further stabilize the state. Sincethe developing solution contains oxygen molecules, the energy in theinterface of the reaction product and developing solution can belowered. Therefore, the affinity acting on the reaction productsapparently changes in the weakening direction. Even when the moleculesas the prospective core of cohesion exist in the solution, theprobability of the cohesion starting actually from the core issufficiently low as compared with when oxygen is not contained in thesolution. Therefore, in the developing solution containing oxygen, thegeneration probability of the cohesion by the reaction products isreduced. Moreover, even for the reaction products starting cohering,since the affinity causing the to cohesion is weakened, the growth speedslows. Therefore, the cohesion of the reaction products is inhibited.

Moreover, the difference of the affinity for the developing solution ofthe exposed portion/the unexposed portion is alleviated, and further thediffusion of the reaction products into the solution is promoted. Fromthis action, in the agitating step during the development, even when aslight oscillating force is applied, a agitating can be efficientlyperformed.

(3) Action of Cleaning by Reducing Solution: Prevention of ReactionProduct from Re-adhering to Resist Surface

Even when the reaction products generated by the developing reaction aredecomposed by the oxygen molecules in the developing solution, anddiffused in the developing solution, the reaction products sometimesre-adhere to the resist due to the interaction between the reactionproducts and the resist surface, in the cleaning step.

The use of the cleaning solution obtained by dissolving hydrogenmolecules in pure water has the effect that the hydrogen moleculesimprove the reaction products or the surface state of the resist. Thiscan weaken the degree of intermolecular interaction between the reactionproducts and the resist surface. That is, the amount of reactionproducts re-adhering to the resist surface is decreased, and the amountof defects causing the re-adhesion of reaction products to the resistsurface is largely inhibited.

The results of the experiment actually performed by the inventor, et al.in order to check the effects of the pretreatment by the oxidizingsolution and the use of the developing solution including the oxidizingsolution will be described hereinafter.

The experiment was carried out according to the above-describedprocedure. To confirm the effect of the present invention, five sampleswere prepared while changing the steps S502, S504, S505, S506, and 3σand defect number were measured. The results of the experiment are shownin Table 5. The pattern formed in each sample is a 130 nmisolated/remaining pattern.

TABLE 5 Ozonated water Ozonated pre- water treatment supply Stir Clean(step (step (step (step 3σ Defect Process S502) S504) S505) S506) [nm]Number Sample 1 None None None Pure 9.2 245 water clean Sample 2 PresentNone None Pure 8.5 130 water clean Sample 3 None Present Present Pure7.5  50 water clean Sample 4 Present Present Present Pure 4.1  25 waterclean Sample 5 Present Present Present Hydrogen 4.2  14 water clean

In Sample 1 obtained by simply forming and cleaning the developingsolution film, the value of 3σ indicating the uniformity was 9.2 nm. Onthe other hand, with “Sample 2” obtained by the ozonated waterpretreatment, the value of 3σ was enhanced to 8.5 nm. Furthermore, with“Sample 3” obtained by supplying and agitating the ozonated water duringthe development, the value of 3σ was enhanced to 7.5 nm. With “Sample 4”obtained by the ozonated water pretreatment and the supplying andagitating of the ozonated water during the development, the value of 3σwas 4.1 nm. Moreover, for “Sample 5” obtained by the ozonated waterpretreatment, the supplying and agitating of the ozonated water duringthe development, and the cleaning with the dissolved hydrogen water, thevalue of 3σ was 4.2 nm.

Moreover, after the development, the organic matter adhesion defectnumber for the whole substrate surfaces of these samples were measured.In Sample 1, 245 defects were measured. In Sample 2, 130 defects weremeasured. In sample 3, 50 defects were measured. In Samples 4 and 5, 25and 14 defects were measured, respectively. It has been found that thenumber of defects is reduced.

(Sixth Embodiment)

Since the constitutions of the developing unit and solution supplysystem for use in a sixth embodiment are similar to those of the fifthembodiment, the description thereof is omitted.

The substrate is coated with the anti-reflection coating, and chemicallyamplified resist, and the desired pattern is reduced projection exposurevia the reticle for exposure by a KrF excimer laser. After the substrateis heat-treated, the development is performed in a sequence shown in aflowchart of FIG. 13. Moreover, FIGS. 14A to 14I show diagrams fordevelopment process. FIG. 13 is a flowchart showing the developingmethod according to the sixth embodiment of the present invention. FIGS.14A to 14I are diagrams showing the developing process according to thesixth embodiment of the present invention.

The developing method of the sixth embodiment will be described in orderwith reference to the flowchart of FIG. 13 and diagrams of FIGS. 14A to14I.

(Conveying and Holding of Substrate: Step S601)

The substrate 100 is conveyed into the developing unit, and held ontothe fixed base 101 (FIG. 14A).

(Dissolved hydrogen water Treatment (Pretreatment) Step: Step S602)

Subsequently, the cleaning solution supply nozzle 121 discharges thedissolved hydrogen water as the reducing solution to form the solutionfilm of dissolved hydrogen water 661 on the substrate 100 (FIG. 14B).The dissolved hydrogen water 661 is generated by passing pure waterthrough the reducing gas dissolved film 552 in which hydrogen generatedby the reducing gas generator 551 is introduced. Thereafter, thesubstrate 100 is rotated, the dissolved hydrogen water 661 is thrownoff, and the substrate 100 surface is dried (FIG. 14C).

(Developing Solution Film Forming Step: Step S603)

Subsequently, the developing solution supply nozzle 511 is scanned fromone end to the other end of the substrate 100, the developing solutionis discharged in a curtain form, and a developing solution film 662 isformed on the substrate 100 (FIG. 14D).

(Dissolved Hydrogen Water Supply Step: Step S604)

Subsequently, the solution supply nozzle 512 is scanned from one end tothe other end of the substrate, the dissolved hydrogen water as thereducing solution is discharged in a curtain form, and a dissolvedhydrogen water film 663 is formed on the developing solution film 662(FIG. 14E).

(Agitating Step: Step S605)

After the current plate 104 on the substrate is moved downwards, thecurrent plate 104 is rotated to form an air current on the substrate 100surface, the developing solution film and dissolved hydrogen water film663 are agitated by the air current, and a mixed solution 664 is formed(FIG. 14F). By this agitating, the developing solution film 662 anddissolved hydrogen water film 663 formed on the substrate 100 aresufficiently mixed, and the concentration unevenness of the developingsolution caused by the reaction products in the developing solution 662is removed.

(Cleaning Step: Step S606)

After the elapse of time for obtaining the desired pattern, thesubstrate 100 is rotated and the cleaning solution supply nozzle 121discharges the dissolved hydrogen water as the reducing solution ontothe substrate 100 (FIG. 14G). The dissolved hydrogen water washes awaythe developing solution, reaction products, and the like, and thedevelopment is stopped.

(Drying Step: Step S607)

After the cleaning, the rotation mechanism 102 rotates the substrate 100at a high speed (FIG. 14H), and the substrate 100 surface is dried (FIG.14I).

(Convey Out Substrate: Step S608)

As described above, the developing steps end, and the substrate 100 isrecovered.

Additionally, the forming method of the developing solution film or thedissolved hydrogen water film is not limited to the method of scanningthe linear developing solution supply nozzle from one end to the otherend of the substrate. Examples of other methods are relatively rotatingthe linear nozzle with respect to the substrate on the substrate anddischarging the solution to form the solution film, spraying thesolution uniformly onto the whole surface of the substrate via the spraynozzle to form the solution film, and the like. The method is notlimited as long as the solution film can be uniformly formed on thesubstrate. Moreover, the agitating method of the formed solution filmcomprises: rotating the current plate on the substrate to generate theair current. However, other methods way involve rotating the substrate,vibrating the solution from the outside, and the like. Any method may beused as long as the action of fluidizing the developing solution on thewhole substrate surface is brought about.

In the pretreatment step and solution supply step, the dissolvedhydrogen water obtained by passing hydrogen gaseous molecules throughthe dissolved film and dissolving the molecules in the pure water isused as the reducing solution. However, as long as a similar effect isproduced, the gaseous molecules to be dissolved are not limited tohydrogen, and the reducing gases such as H₂S, HNO₃, and H₂SO₃ may beused. Moreover, as described in the first embodiment, the oxidizingsolutions such as ozonated water may be used as the solution of thepretreatment step.

Moreover, in the cleaning step, the ozonated water obtained byintroducing the ozone gaseous molecules in the dissolved film anddissolving the molecules in the pure water is used as the oxidizingsolution. However, as long as a similar effect is produced, the gaseousmolecules to be dissolved are not limited to ozone, and the oxidizinggases such as oxygen, carbon monoxide, and hydrogen peroxide may beused.

Furthermore, as the reducing solution in the cleaning step, thedissolved hydrogen water obtained by introducing the hydrogen gaseousmolecules in the dissolved film and dissolving the molecules in purewater is used. However, when a similar effect is produced, the gaseousmolecules to be dissolved are not limited to hydrogen. The reducinggases such as H₂S, HNO₃, and H₂SO₃ may be used. Moreover, aftersupplying the reducing solution, pure water may be supplied to clean thesubstrate. As the cleaning solution, the combination of the reducingsolution, oxidizing solution, and pure water can appropriately beselected, if the cleaning effect is enhanced.

The actions of the pretreatment by the reducing solution, and thecleaning by the developing solution including the reducing solution andthe oxidizing solution in the sixth embodiment will be described next.

(1) Action of Reducing Solution in Pretreatment Step: PropertyModification of Resist Surface

For the exposed and heat-treated positive photosensitive resist film,during the development, the affinity between the molecules of theexposed portion surface of the resist and the alkali ions in thedeveloping solution is different in strength from the affinity betweenthe molecules of the unexposed portion surface of the resist and thealkali ions in the developing solution. Therefore, in the region inwhich the area ratio of the exposed portion to the unexposed portion onthe resist film to be treated differs, the affinity received from theresist surface by the alkali ions largely differs. As a result, theamount of alkali ions flowing into the resist surface changes with thearea ratio of the exposed portion to the unexposed portion, and theprogress speed of the development also changes. That is, the developingspeed differs with the place on the resist surface to be treated.Therefore, the uniformity of the resist pattern size after thedevelopment is deteriorated.

The hydrogen molecules have an action of reducing the resist surfaceupon contacting the resist surface. Therefore, the difference of theaffinity of the exposed portion surface and unexposed portion surfacefor the developing solution is alleviated. Thereby, the difference ofthe developing speed locally generated during the development isreduced, and the size uniformity after the development is enhanced.

(2-1) First Action of Developing Solution Containing Reducing Solution:Promotion of Diffusion of Reaction Products into Developing Solution

For the positive resist, in the developing step, the exposed portion isdissolved in the developing solution, whereas the unexposed portion hasa property of being hardly dissolved. This is because for the exposedportion of the photosensitive resist, the reaction products generated bythe neutralization with the developing solution are dissolved in thedeveloping solution. However, when the area ratio of the exposed portionto the unexposed portion on the resist to be treated differs, thegenerated amount of the reaction products largely differs. For example,with the isolated pattern, since the broad exposed portion exists in theperiphery, the amount of reaction products is remarkably large ascompared with the L/S pattern. Since the reaction products easily remainbetween the patterns, and are not easily diffused in the developingsolution, the alkali concentration of the developing solution around theisolated pattern is low as compared with the alkali concentration of theL/S pattern. Therefore, a time necessary for forming the desired patternsize differs with the pattern. That is, since the time required for thedevelopment differs with the difference of the pattern, the sparse/densesize difference of the resist pattern size after the developmentdisadvantageously increases. For the sparse/dense difference, it isdifficult to completely remove the reaction products only by agitatingthe products in the course of the development and improve the sizedifference.

When the hydrogen molecules contained in the developing solution arereduced/reacted with the reaction products generated by theneutralization, the surface potential of the reaction products changes.Thereby, the repulsive force is generated among the reaction productsand the products are prevented from cohering to one another, so that thereaction products are easily diffused in the developing solution, andthe development progresses. That is, when the surface potential of thereaction products is changed by the hydrogen molecules, the sparse/densesize difference generated by the alkali concentration difference of thedeveloping solution can largely be reduced. Of course, it is needless tosay that the diffusion of the reaction products is promoted by addingthe agitating.

(2-2) Second Action of Developing Solution Including Reducing Solution:Dissolution Contrast Increase with Concentration Drop of DevelopingSolution

When the developing solution is supplied onto the substrate, and thereducing solution is supplied and agitated, the following action isobtained. Since the developing solution having a high concentration isfirst supplied, a large part of the exposed region is developed.However, in this case, a large amount of alkali is consumed, and thedifference of the alkali concentration with the place is generated. As aresult, the developing speed changes with the place, and a sizedispersion is generated. Thereafter, even when the alkali concentrationis restored by the agitating, the concentration entirely increases.Therefore, the development is further promoted regardless of the placewhere the development progresses or does not progress before theagitating. As a result, the development progresses while the first sizedifference is left. However, after supplying the developing solution,the reducing solution is supplied and agitated, so that the alkaliconcentration entirely drops and the concentration is uniformed in thestate. Therefore, where the development progresses up to the weakoptical image, the development is not promoted. Conversely, where thedevelopment progresses only to the relatively strong optical image, thedevelopment progresses. The dissolution contrast increases in thismanner. As a result, the first size dispersion resulting from theconcentration dispersion is largely reduced.

(2-3) Third Action of Developing Solution Including Reducing Solution:Alleviation of Cohesion of Reaction Products

Even when the reaction products generated by the developing reaction areonce diffused in the developing solution, the reaction products laterpossibly cohere by the interaction acting among the reaction products inthe solution. Therefore, the problem is that the cohering reactionproducts again adhere onto the resist and form the defects.

When the hydrogen molecules are contained in the developing solution,the hydrogen molecules have an effect of modifying the reactionproducts, or the surface state of the resist. Thereby, the degree of theintermolecular interaction between the reaction products can beweakened, and the hydrogen molecules in the developing solution caninhibit the reaction products from cohering. That is, the amount ofreaction products again adhering to the resist surface is decreased, andthe amount of defects caused by re-adhesion of the cohering reactionproducts to the resist surface is largely suppressed.

(3) Action of Cleaning by Oxidizing Solution: Oxidation/Decomposition ofAdhering Organic Particles

For the exposed, and heat-treated positive photosensitive resist, duringthe development, the exposed portion is dissolved, and the unexposedportion is hardly dissolved. In the developing step, when the exposedportion of the photosensitive resist contacts the developing solution,the dissolution starts and simultaneously the reaction product byneutralization is generated. The reaction product is diffused in thesolution, but a part of the product is weakly bonded to the resist resinand remains between the resist patterns without being diffused. Thereaction product remaining between the patterns coheres, and formsorganic particles. When these organic particles adhere to the resistsurface and cohere, the particles possibly remain as defects on theresist pattern after the development.

When the oxidizing solution is used as the cleaning solution, theorganic particles are oxidized/decomposed, and diffused in the solution.Therefore, the probability of generation of the organic matter adhesiondefects remaining on the resist pattern after the development canremarkably be reduced.

Action of Cleaning by Reducing Solution: Prevention of Reaction Productfrom Re-adhering to Resist Surface

Even when the reaction products generated by the developing reaction aredecomposed by the oxygen molecules in the developing solution, anddiffused in the developing solution, the reaction products sometimesre-adhere to the resist as the defects, due to the interaction betweenthe reaction products and the resist surface in the cleaning step.

The use of the cleaning solution obtained by dissolving hydrogenmolecules in pure water has an effect that the hydrogen moleculesimprove the reaction products or the surface state of the resist. Thiscan weaken the degree of the intermolecular interaction between thereaction products and the resist surface. That is, the amount ofreaction products re-adhering to the resist surface is decreased, andthe amount of defects causing the re-adhesion of the reaction productsto the resist surface is largely inhibited.

The results of the experiment actually performed by the inventor, et al.in order to check the effects of the pretreatment by the reducingsolution, the development using the developing solution including thereducing solution, and the cleaning by the oxidizing solution will nextbe described.

The experiment was carried out according to the above-describedprocedure. To confirm the effect of the present invention, five sampleswere prepared while changing the steps S602, S604, S605, S606, and 3σand the defect number was measured. The results of the experiment areshown in Table 6. The pattern formed in each sample is a 130 nm isolatedpattern.

TABLE 6 Dissolved hydrogen Dissolved water hydrogen water treatmentsupply Agitation Clean 3σ Defect Process (step S602) (step S604) (stepS605) (step S606) [nm] Number Sample 6 none none none Pure water 9.2 245clean Sample 7 present none none Pure water 8.4 150 clean Sample 8 nonepresent present Pure water 6.5  45 clean Sample 9 present presentpresent Pure water 4.1  40 clean Sample 10 present present presentOzonated 4  10 water + hydro-gen water clean

In Sample 6 obtained by forming and cleaning the developing solutionfilm, the value of 3σ indicating the uniformity was 9.2 nm. The value of3σ of Sample 7 obtained by the dissolved hydrogen water treatment was8.4 nm. The value of 3σ of Sample 8 obtained by supplying and agitatingthe dissolved hydrogen water during the development was 6.5 nm. Thevalues of 3σ of Samples 9, 10 obtained by performing the dissolvedhydrogen water pretreatment, and supplying and agitating the dissolvedhydrogen water during the development are 4.1 nm and 4.0 nm,respectively, and are enhanced as compared with Samples 6 to 8.

Moreover, after the development, the organic matter adhesion defectnumbers on the whole substrate surfaces of these samples were measured.In Sample 6, 245 defects were measured. In Samples 7 and 8, 150 and 45defects were measured, respectively, and the number of defects wasreduced as compared with Sample 6. Furthermore, in Samples 9 and 10, 40and 10 defects were measured, respectively. It has been found that thenumber of defects was further reduced.

(Seventh Embodiment)

FIG. 15 is a flowchart showing the treatment procedure of the developingmethod according to a seventh embodiment of the present invention.Moreover, FIGS. 16A to 16E are diagrams showing the developing methodaccording to the seventh embodiment of the present invention.

(Conveying and Holding of Substrate: Step S701)

After using the KrF excimer laser to reduced projection exposure thedesired pattern via the reticle for exposure on the anti-reflectioncoating and chemically amplified resist with which the surface iscoated, a heat-treated (PEB) substrate 700 is conveyed into thedeveloping unit by a conveyance robot (not shown), and held onto a fixedbase 701 by suction (FIG. 16A).

(Developing Solution Film Forming Step: Step S702)

Subsequently, as shown in FIGS. 16B, 16C, a linear developing solutionsupply nozzle 711 is scanned from one end to the other end of thesubstrate 700, the developing solution is discharged in a curtain formvia a supply port of the developing solution supply nozzle 711, and adeveloping solution film 731 is formed on the substrate 700.Additionally, FIG. 16B is a plane view, and FIG. 16C is a sectional viewof FIG. 16B. For the developing solution supply nozzle 711 of theseventh embodiment, a supply amount distribution of a direction (depthdirection of the drawing surface) vertical to the scanning direction iskept constant.

Here, a relation between a developing solution film thickness formed onthe substrate according to the seventh embodiment of the presentinvention and a developing solution supply nozzle 711—substrate 700 gapwill be described with reference to FIGS. 17A to 17C.

First, to form the solution film, when the gap between the developingsolution supply nozzle 711 and the substrate 700 is large as comparedwith the formed solution film thickness (d<<H), as shown in FIG. 17A,the developing solution discharged from the developing solution supplynozzle 711 is pulled upwards by the developing solution supply nozzle711. Therefore, the film thickness of a developing solution 731 duringthe solution supply is thick as compared with the thickness in a steadystate, and a vertical interval is made. Therefore, during the stop ofthe supply of the developing solution in the terminal end of thesubstrate 700, a flow of the developing solution is generated fromcounteraction in a direction in which the film thickness of thedeveloping solution film 731 is thin. This flow of the developingsolution possibly generates a dispersion of a pattern size after thedevelopment.

On the other hand, when the gap between the nozzle and the substrate isextremely small as compared with the formed developing solution filmthickness (d>>H), as shown in FIG. 17B, the developing solutiondischarged from the developing solution supply nozzle 711 is pushed outof the developing solution supply nozzle 711. The thickness of thedeveloping solution film 731 during the supply of the developingsolution is small as compared with the steady state, and the verticalinterval is made. Therefore, during the stop of the supply of thedeveloping solution in the terminal end of the substrate 700, the flowof the developing solution is generated in the direction in which thesolution film thickness is thin. The size dispersion by the flow of thedeveloping solution is possibly generated depending on the verticalinterval between the developing solution supply nozzle 711—substrate 700gap and the film thickness of the developing solution film 731.

Therefore, in order to remove a size fluctuation with the solution flowgenerated by the developing solution supply nozzle 711—substrate 700 gapand the film thickness of the developing solution film 731, as shown inFIG. 17C, the developing solution supply nozzle 711—substrate 700 gap isset to be substantially the same as the film thickness of the developingsolution film 731, and the developing solution is supplied. Thereby, thedeveloping solution supply nozzle 711 is scanned, and the developingsolution is supplied, so that the generated flow of the solution can beremoved. That is, the flow of the developing solution by scanning thedeveloping solution supply nozzle 711 is inhibited, and it is possibleto largely reduce the size dispersion in the plane depending on thescanning direction or the size dispersion in the chip.

When the developing solution supply nozzle 711 supplies the developingsolution, and the developing solution supply nozzle 711 is scanned fromone end to the other end of the substrate 700 to form the developingsolution film, the thickness of the developing solution film 731 isdetermined by the relative speed of the scanning speed of the developingsolution supply nozzle 711 and the supply speed of the developingsolution from the developing solution supply nozzle 711.

Concretely, when the length of the supply port of the developingsolution supply nozzle 711 is defined as L (mm), the nozzle scanningspeed is V (mm/sec), the developing solution supply speed is Q (μl/sec),the formed solution film thickness is d (mm), and the gap is H (mm), atleast one of the nozzle scanning speed V (mm/sec), the developingsolution supply speed Q (μl/sec), and the gap H (mm) is controlled.d≈H  (1)d=Q/(V×L)  (2)

(Step S703: Cleaning Step)

After the elapse of a predetermined time after the solution film isformed, as shown in FIG. 16D, a rinse nozzle 721 disposed above thesubstrate 700 supplies a rinse solution (e.g., pure water) 732, arotation mechanism 702 rotates the substrate 700, and the substrate 700is cleaned.

(Step S704: Drying Step)

Furthermore, as shown in FIG. 16E, the substrate 700 is rotated at highspeed, the rinse solution is thrown off, and the substrate 700 is dried.

(Step S705: Convey Out Substrate)

Subsequently, the completely dried substrate 700 is conveyed out of thedeveloping unit by a conveyance robot (not shown).

The present embodiment will next be described based on actual experimentresults. FIG. 18 shows the size uniformity of an isolated line in thechip of a time at which the gap between the developing solution supplynozzle 711 and the substrate 700 is changed. On the experimentconditions that the scanning speed V of the developing solution supplynozzle 711=50 mm/sec, the developing solution supply speed Q=20 ml/sec,and the length L of the supply port of the developing solution supplynozzle 711 L=200 mm, the film thickness of the formed developingsolution film is d=2.0 mm from equation (2). However, when thesubstantially equal gap is given to the film thickness, the flow of thesolution is removed. It is seen that the size uniformity in thesubstrate plane is enhanced.

Additionally, in the above-described embodiment, the solution filmforming step of the developing solution has been described. However, thetechnique of the present embodiment can be used in forming the films ofthe developing solutions including a developing solution containing areflection preventive material, a solution containing a photosensitivematerial, a solution containing a low dielectric material, a solutioncontaining a ferroelectric material, a solution containing an electrodematerial, a solution containing a pattern transfer material, a solutioncontaining a magnetic material for use in a donut-shaped storage medium,and a solution containing a light absorption reaction material for usein the donut-shaped storage medium.

(Eighth Embodiment)

A method of forming a uniform solution film will be described in aneighth embodiment. In the eighth embodiment, further control is added tothe control described in the seventh embodiment.

Since the forming method of the developing solution is similar to thatof the seventh embodiment, the description thereof is omitted. Only thecontrol in the supply step of the developing solution will be described.

Similarly as the seventh embodiment, when the developing solution supplynozzle 711 supplies the developing solution, and the developing solutionsupply nozzle 711 is scanned from one end to the other end of thesubstrate 700 to form the developing solution film, the film thicknessof the developing solution film is determined by a ratio of the scanningspeed of the developing solution supply nozzle 711 to the supply speedof the developing solution from the developing solution supply nozzle711. Concretely, when the length of the supply port of the developingsolution supply nozzle 711 is defined as L (mm), the nozzle scanningspeed is V (mm/sec), the developing solution supply speed is Q (μl/sec),the formed solution film thickness is d (mm), and the gap is H (mm), theformed solution film thickness d (mm) is approximately represented bythe following equations.d≈H  (1)d=Q/(V×L)  (2)

Here, a method of controlling the nozzle scanning speed V (mm/sec) andthe developing solution supply speed Q (μl/sec) will be described.

With the substrate 700 of a circular wafer, even when the developingsolution film is formed via the developing solution supply nozzle 711with the same developing solution supply speed and the same supplyamount, the substantial supply amount of the developing solution differswith the place of the substrate because of the circular shape of thesubstrate. For example, as shown in FIG. 19A, when the developingsolution supply nozzle 711 passes to the middle of the substrate 700from the supply start end, the length (hereinafter referred to as thedeveloping solution supply length) of the substrate 700 of the portionwith the developing solution supplied onto the substrate from thedeveloping solution supply nozzle 711 gradually increases. Therefore, asshown in FIG. 19B, force of a developing solution 831 flowing toward theoutside of the circumference of the reaction product acts from thedeveloping solution supply nozzle 711 due to the interaction of thedeveloping solution 831 and substrate 700, and the film thickness of aformed developing solution film 832 becomes thin.

Moreover, as shown in FIG. 20A, while the developing solution supplynozzle 711 passes to the developing solution supply start end from themiddle of the substrate 700, the developing solution supply lengthgradually decreases with the scanning of the developing solution supplynozzle 711. Therefore, as shown in FIG. 20B, a force is exerted suchthat the developing solution 831 supplied to the outside of thecircumference of the substrate 700 from the developing solution supplynozzle 711 is attracted into the plane of the substrate 700. The filmthickness of the formed developing solution film is increased. Thereby,during the stop of the supply of the developing solution in the terminalend of the substrate 700, the flow of the developing solution isgenerated toward the small solution film thickness. The size dispersiondependent on the flow of the developing solution is generated in thedeveloping solution film 832 within the substrate plane.

In order to remove this difference in solution film thickness generatedby the interaction of the developing solution and substrate, thedeveloping solution supply speed Q (μl/sec), or the nozzle scanningspeed V (mm/sec) is corrected, for example, with the followingapproximate equations (3), (4).Q=Q ₀{1+α×(dl/l)}  (3)V=V ₀{1−α′×(dl/l)}  (4)

Here, the developing solution supply speed Q₀ (μl/sec) in the wafermiddle, the nozzle scanning speed V₀ (mm/sec), and the gap H (mm) areset to satisfy the equations (1) and (2), and the developing solutionsupply speed Q (μl/sec) or the nozzle scanning speed V (mm/sec) iscontrolled in accordance with the position of the nozzle on thesubstrate. Concretely, the length of the supply port of the developingsolution supply nozzle 711 is L (mm), a wafer radius is r (mm), thenozzle scanning speed is V (mm/sec), the formed solution film thicknessis d (mm), and a scanning nozzle position from the wafer middle is x(mm) (−r≦x≦r). A change amount of the length 1 (mm) of the substrate ofthe portion with the developing solution supplied thereto duringmovement of the nozzle on the substrate by a unit distance (dx) is(dl/l), and α and aα are control factors of the developing solutionsupply speed and nozzle scanning speed.

When the developing solution supply speed Q (μl/sec) and the nozzlescanning speed V (mm/sec) are approximately corrected by the equations(3) and (4) in this manner, the solution film thickness d can be kept tobe substantially constant.

Concretely, as shown in FIG. 21, the developing solution supply speed Q(μl/sec) is controlled. This can eliminate the fluctuation of thedeveloping solution film thickness generated by the developing solutionsupply method in which the nozzle is scanned from one end to the otherend with a uniform developing solution supply speed. Accordingly, theflow of the solution can be inhibited. That is, when the flow of thedeveloping solution is inhibited, the size uniformity in the substratesurface, and the size uniformity in the chip are enhanced. A similareffect can also be obtained when the nozzle scanning speed V (mm/sec) iscontrolled as shown in FIG. 22.

The present embodiment will next be described based on actual experimentresults (Table 7).

TABLE 7 In-plane Average uniformity size (3σ: nm) Supply amount 197.25.9 control nozzle Conventional nozzle 199.5 8.7

Assuming the nozzle scanning speed V=50 mm/sec, the developing solutionsupply speed Q₀=20 ml/sec in the wafer middle with the developingsolution supply speed Q, and L=200 mm, the developing solution supplyspeed was controlled to satisfy the relation of the equation (3) and thedeveloping solution was supplied. As a result of the experiment, thedeveloping solution supply speed is controlled in accordance with thescanning point of the nozzle, and the size uniformity in the wafer planeis enhanced.

In addition, in the above-described embodiment, the solution filmforming step of the developing solution has been described. However, thetechnique of the present embodiment can be used in forming the films ofthe solutions including the developing solution containing thereflection preventive material, the solution containing thephotosensitive material, the solution containing the low dielectricmaterial, the solution containing the ferroelectric material, thesolution containing the electrode material, the solution containing thepattern transfer material, the solution containing the magnetic materialfor use in the donut-shaped storage medium, and the solution containingthe light absorption reaction material for use in the donut-shapedstorage medium.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1. A substrate treatment method comprising: coating a substrate with aphotosensitive resist film; exposing said photosensitive resist film;supplying a reducing solution to the surface of said exposedphotosensitive resist film and performing a pretreatment; developing thephotosensitive resist film subjected to said pretreatment; and supplyinga cleaning solution to said substrate, and cleaning the substrate;wherein the reducing solution is an aqueous solution containing at leastone of hydrogen, H₂S, HNO₃, and H₂SO₃.
 2. The substrate treatment methodaccording to claim 1, further comprising: discharging the developingsolution to said photosensitive resist film from a developing solutionsupply nozzle; relatively moving said substrate and said developingsolution supply nozzle; forming a developing solution film on thesurface of the photosensitive resist film; and developing saidphotosensitive resist film.
 3. The substrate treatment method accordingto claim 2, further comprising: agitating said developing solution film;and developing said photosensitive resist film.
 4. The substratetreatment method according to claim 1, further comprising: removing saidreducing solution from the surface of said photosensitive resist filmafter said pretreatment; drying the surface of the resist film; anddeveloping said photosensitive resist film.
 5. The substrate treatmentmethod according to claim 2, further comprising: forming said developingsolution film on the resist film surface in a state in which saidreducing solution remains on the surface of said photosensitive resistfilm after said pretreatment; agitating the remaining solution and thedeveloping solution; and developing said photosensitive resist film. 6.A manufacturing method of a semiconductor device, comprising: coating asubstrate with a photosensitive resist film; exposing saidphotosensitive resist film; supplying a reducing solution to the surfaceof said exposed photosensitive resist film and performing apretreatment; developing the photosensitive resist film subjected tosaid pretreatment; and supplying a cleaning solution onto saidsubstrate, and cleaning the substrate; wherein the reducing solution isan aqueous solution containing at least one of hydrogen, H₂S, HNO₃, andH₂SO₃.